Title :
Graded-GaAs1-xPx base in heterojunction bipolar transistors with InGaP emitters
Author :
Ohkubo, Michio ; Ikeda, Nariaki ; Ninomiya, Takao
Author_Institution :
Yokohama R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We have fabricated the graded-GaAsP base HBTs with InGaP emitters for the first time. It was confirmed that heavy carbon-doping into GaAsP, as well as GaAs, could be realized by using MOCVD. The measured current gain was as high as over 100 at a collector current density (J c) of 3×104 A/cm2. Furthermore, compared with the uniform-GaAs base HBTs, current-gain enhancement due to the built-in field in the base of the graded-base HBTs was also confirmed in a range of Jc=1×102 A/cm2 to 3×104 A/cm2
Keywords :
III-V semiconductors; carbon; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; InGaP emitters; InP; MOCVD; built-in field; collector current density; common emitter I-V characteristics; current gain; epitaxial layer structure; graded-GaAs1-xPx base; heavy C-doping; heterojunction bipolar transistors; Ash; Carbon dioxide; Current measurement; Density measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Research and development; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522178
