Title :
Time dependence of catastrophic optical damage (COD) of 0.98 μm GaInAs/GaInP strained quantum well laser
Author :
Hashimoto, Jun-ichi ; Yoshida, Ichiro ; Murata, Michio ; Katsuyama, Tsukuru
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
We investigated the aging time dependence of the COD of 0.98 μm GaInAs/GaInP strained quantum well laser based on the stress-strength model. Applying a statistical treatment to the experimental results, we found for the first time that the critical power level (CPL) data at each aging time were distributed according to the Weibull statistics, and the decrease rate of CPL with time depended strongly upon the current
Keywords :
III-V semiconductors; Weibull distribution; ageing; gallium arsenide; gallium compounds; indium compounds; laser transitions; life testing; quantum well lasers; 0.98 μm GaInAs/GaInP strained quantum well laser; 0.98 mum; GaInAs-GaInP; Weibull statistics; aging time; aging time dependence; catastrophic optical damage; critical power level; current dependence; statistical treatment; stress-strength model; time dependence; Aging; Fiber lasers; Gallium arsenide; Laser modes; Laser noise; Optical pumping; Power generation; Power lasers; Pump lasers; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522182
