Time dependence of catastrophic optical damage (COD) of 0.98 μm GaInAs/GaInP strained quantum well laser

Author

Hashimoto, Jun-ichi ; Yoshida, Ichiro ; Murata, Michio ; Katsuyama, Tsukuru

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

472

Lastpage

475

Abstract

We investigated the aging time dependence of the COD of 0.98 μm GaInAs/GaInP strained quantum well laser based on the stress-strength model. Applying a statistical treatment to the experimental results, we found for the first time that the critical power level (CPL) data at each aging time were distributed according to the Weibull statistics, and the decrease rate of CPL with time depended strongly upon the current

Keywords

III-V semiconductors; Weibull distribution; ageing; gallium arsenide; gallium compounds; indium compounds; laser transitions; life testing; quantum well lasers; 0.98 μm GaInAs/GaInP strained quantum well laser; 0.98 mum; GaInAs-GaInP; Weibull statistics; aging time; aging time dependence; catastrophic optical damage; critical power level; current dependence; statistical treatment; stress-strength model; time dependence; Aging; Fiber lasers; Gallium arsenide; Laser modes; Laser noise; Optical pumping; Power generation; Power lasers; Pump lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522182

Filename

522182