Increased lifetime of aluminum-free LEDs on Si substrates grown by MOCVD

Author

Egawa, T. ; Tanaka, A. ; Dong, J. ; Matsumoto, K. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

480

Lastpage

483

Abstract

An InGaP layer on a Si substrate grown by metalorganic chemical vapor deposition exhibits a mirror-like surface morphology, dark spot density of 1×10⁷ cm^-2 and 77 K photoluminescence peak wavelength of 645.5 nm. In comparison with a conventional Al-contained AlGaAs/GaAs light-emitting diode (LED) on a Si substrate, an Al-free LED on a Si substrate has no significant growth of dark-line defects. As a result, an increased lifetime has been achieved in an Al-free LED on a Si substrate

Keywords

III-V semiconductors; crystal defects; gallium compounds; indium compounds; life testing; light emitting diodes; photoluminescence; semiconductor growth; surface structure; vapour phase epitaxial growth; 645.5 nm; 77 K; 77 K photoluminescence peak wavelength; Al-free LED; InGaP; InGaP layer; MOCVD; Si; Si substrates; aluminum-free LED; dark spot density; dark-line defects; increased lifetime; metalorganic chemical vapor deposition; mirror-like surface morphology; Chemical technology; Chemical vapor deposition; Degradation; Diode lasers; Gallium arsenide; Light emitting diodes; MOCVD; Residual stresses; Scanning electron microscopy; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522184

Filename

522184