DocumentCode
3134288
Title
An inlaid CVD Cu based integration for sub 0.25 /spl mu/m technology
Author
Denning, D. ; Braeckelmann, G. ; Zhang, J. ; Fiordalice, B. ; Venkatramen, R.
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1998
fDate
9-11 June 1998
Firstpage
22
Lastpage
23
Abstract
This report describes the development and integration of a blanket CVD copper film into advanced microprocessor devices. The in situ deposition of sputtered Tantalum based or CVD Titanium based barrier layers and PVD Cu under and overlayers has been demonstrated to improve film adhesion and device electrical performance.
Keywords
CVD coatings; adhesion; copper; integrated circuit metallisation; microprocessor chips; 0.25 micron; CVD titanium barrier layer; Cu; PVD Cu overlayer; PVD Cu underlayer; Ta; Ti; adhesion; blanket CVD copper film; electrical performance; in situ deposition; integration technology; microprocessor device; sputtered tantalum barrier layer; Adhesives; Atherosclerosis; Conductivity; Copper; Electric resistance; Metallization; Optical films; Plasma temperature; Substrates; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689183
Filename
689183
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