Title :
An inlaid CVD Cu based integration for sub 0.25 /spl mu/m technology
Author :
Denning, D. ; Braeckelmann, G. ; Zhang, J. ; Fiordalice, B. ; Venkatramen, R.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
This report describes the development and integration of a blanket CVD copper film into advanced microprocessor devices. The in situ deposition of sputtered Tantalum based or CVD Titanium based barrier layers and PVD Cu under and overlayers has been demonstrated to improve film adhesion and device electrical performance.
Keywords :
CVD coatings; adhesion; copper; integrated circuit metallisation; microprocessor chips; 0.25 micron; CVD titanium barrier layer; Cu; PVD Cu overlayer; PVD Cu underlayer; Ta; Ti; adhesion; blanket CVD copper film; electrical performance; in situ deposition; integration technology; microprocessor device; sputtered tantalum barrier layer; Adhesives; Atherosclerosis; Conductivity; Copper; Electric resistance; Metallization; Optical films; Plasma temperature; Substrates; Titanium;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689183
