Title :
High power InGaAsP/InP 1.625 μm strained quantum well lasers
Author :
Munakata, Tsutomu ; Kashima, Yasumasa ; Kusumoto, Shigehiro ; Matoba, Akio ; Takano, Hiroshi
Author_Institution :
Opt. Device Div., OKI Electr. Ind. Co. Ltd., Japan
Abstract :
A high optical power of over 100 mW has been successfully coupled into a single-mode fiber using 1.625 μm strained multiple quantum well (MQW) lasers. This record coupled power is achieved as a result of the optimization of separated confinement heterostructure (SCH) layer thickness
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical fibre couplers; quantum well lasers; 1.625 mum; 100 mW; InP; MQW lasers; SCH layer thickness; high optical power; high power InGaAsP/InP 1.625 μm strained quantum well lasers; multiple quantum well; optimization; record coupled power; separated confinement heterostructure; single-mode fiber; Epitaxial growth; Epitaxial layers; Fiber lasers; Indium phosphide; Optical fiber testing; Optical fibers; Power generation; Power lasers; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522188
