Title :
InGaAsP strained MQW-DFB lasers with high resonance frequency and low distortion for high speed analog transmission
Author :
Watanabe, H. ; Aoyagi, T. ; Takemoto, A. ; Takiguchi, T. ; Omura, E.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
The resonance frequency has been improved by adopting a strained multiple quantum well (MQW) structure with the strain-compensated layers and optimizing its design. Moreover it has been demonstrated that our newly developed structure having current blocking layers fabricated by MOCVD is very efficient to suppress the leakage current. As a result, the third-order-intermodulation distortion (IMD3) of -80 dBc and relative intensity noise (RIN) of -152 dB/Hz have been obtained under a two-tone test at 1.9 GHz
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; intermodulation distortion; laser noise; leakage currents; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.9 GHz; InGaAsP; InGaAsP strained MQW-DFB lasers; MOCVD; RIN; current blocking layers; design; high resonance frequency; high speed analog transmission; leakage current; low distortion; relative intensity noise; strain-compensated layers; strained multiple quantum well structure; third-order-intermodulation distortion; two-tone test; Carrier confinement; Controllability; High speed optical techniques; Laser noise; Leakage current; Nonlinear distortion; Optical distortion; Quantum well devices; Resonance; Resonant frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522190
