Title :
Internal friction: a fast technique for electromigration failure analysis
Author :
Vollkommer, F. ; Bohn, H.G. ; Robrock, K.H. ; Schilling, W.
Author_Institution :
Inst. fuer Festkorperforschung, Julich, West Germany
Abstract :
Internal friction (IF) describes the mechanical energy losses in vibrating samples due to stress-induced movement of defects in solids. Such experiments on thin films provide direct experimental access to the examination of grain boundary diffusion phenomena, which are known to be the main origin of electromigration. It is found that for a series of Al-alloys there exists a correlation between the results from IF experiments and electromigration lifetime tests. Thus IF is suggested as a complementary method to the standard test procedures. The method can be applied to samples prepared from wafers coated in industry production lines. Sample preparation and test requires only a few hours.<>
Keywords :
VLSI; aluminium alloys; electromigration; failure analysis; integrated circuit technology; internal friction; life testing; metallic thin films; metallisation; Al; Al/sub 0.987/Si/sub 0.01/V/sub 0.003/; Al/sub 0.988/Si/sub 0.01/Cu/sub 0.002/; Al/sub 0.989/Si/sub 0.01/Ti/sub 0.001/; Al/sub 0.99/Si/sub 0.01/; Al/sub 0.994/V/sub 0.006/; Si; VLSI microelectronic circuits; complementary method; defects; direct experimental access; electromigration failure analysis; grain boundary diffusion phenomena; industry production lines; interconnects; internal friction; lifetime tests; mechanical energy losses; standard test procedures; stress-induced movement; thin films; vibrating samples; Atmospheric measurements; Current density; Damping; Electromigration; Failure analysis; Friction; Grain boundaries; Integrated circuit interconnections; Resonance; Vibrations;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66061