Title :
Waveguide-fed PIN-HFET receiver at 2.5 Gbit/s integrated on InP
Author :
Giraudet, L. ; Bruno, A. ; Legros, E. ; Ghirardi, F. ; Berthier, P. ; Scavennec, A. ; Carenco, A. ; Bland, S.W. ; Davies, J.I.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
We report the monolithic integration of a building block, a waveguide-fed photoreceiver, comprising a semiconductor waveguide, a PIN photodiode, and a 3 stage low noise preamplifier, based on 0.5 μm gate length high performance HFETs. Internal sensitivities better than -27dBm at 2.5Gbit/s and -25dBm at 5Gbit/s have been measured
Keywords :
III-V semiconductors; field effect integrated circuits; indium compounds; integrated optoelectronics; optical noise; optical receivers; optical waveguides; p-i-n photodiodes; preamplifiers; sensitivity; wavelength division multiplexing; 0.5 mum; 2.5 Gbit/s; InP; PIN photodiode; building block; high performance HFETs; internal sensitivities; low noise preamplifier; monolithic integration; semiconductor waveguide; waveguide-fed PIN-HFET receiver; Chemicals; HEMTs; Indium phosphide; MODFETs; Optical fiber devices; Optical fiber polarization; Photodiodes; Photoluminescence; Planar waveguides; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522194
