Title :
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
Author :
Murtaza, S.S. ; Tan, I.H. ; Chelakara, R.V. ; Islam, M.R. ; Srinivasan, A. ; Anselm, K.A. ; Bowers, J.E. ; Hu, E.L. ; Dupuis, R.D. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Greater than 80% external quantum efficiency has been demonstrated in a dual-wavelength resonant-cavity photodetector. The absorption takes place in an In0.53Ga0.47As absorbing layer which is placed in an InP Fabry-Perot cavity. The top mirror is formed by evaporating one pair of a CaF2/ZnSe dielectric stack and a GaAs/AlAs dual-wavelength mirror is wafer-bonded to the InP-based cavity to serve as the bottom mirror
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; light absorption; mirrors; photodetectors; 80 percent; AlAs; CaF2; CaF2/ZnSe dielectric stack; GaAs; GaAs/AlAs dual-wavelength mirror; In0.53Ga0.47As; In0.53Ga0.47As absorbing layer; InP; InP Fabry-Perot cavity; InP-based cavity; ZnSe; bottom mirror; dual-wavelength; dual-wavelength resonant-cavity photodetector; external quantum efficiency; high-efficiency; long wavelengths; top mirror; wafer-bonded; wafer-fused resonant-cavity photodetector; Absorption; Fabry-Perot; Gallium arsenide; High speed optical techniques; Indium phosphide; Mirrors; Optical refraction; Photodetectors; Reflectivity; Resonance;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522197
