Strain effects in InAsP/InP MQW modulators for 1.06 μm operation

Author

Stavrinou, P.N. ; Haywood, S.K. ; Hart, L. ; Hopkinson, M. ; David, J.P.R. ; Hill, G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1995

fDate

9-13 May 1995

Firstpage

536

Lastpage

539

Abstract

In summary we have studied the electroabsorption response of InAsP-InP MQW p-i-n structures grown for the first time by SS-MBE. Some partial relaxation has taken place due to the cumulative effects of strain in successive QWs. Despite this the electrical properties of the devices were not degraded and demonstrated leakage currents of less than InA for up to 16 V reverse bias

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; leakage currents; molecular beam epitaxial growth; optical fabrication; p-i-n photodiodes; semiconductor growth; semiconductor quantum wells; spectral line breadth; 1 nA; 1.06 mum; 16 V; InAsP-InP; InAsP-InP MQW p-i-n structures; InAsP/InP MQW modulators; SS-MBE; cumulative effects; electrical properties; electroabsorption response; leakage currents; partial relaxation; reverse bias; strain effects; successive QWs; Capacitive sensors; Educational institutions; Gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Quantum well devices; Reflection; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522198

Filename

522198