Temperature dependence of InGaAsP electro-absorption modulator module

Author

Tanaka, Hideaki ; Horita, Masayoshi ; Matsushima, Yuichi

Author_Institution

KDD Kamifukuoka R&D Labs., Saitama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

540

Lastpage

543

Abstract

We have investigated the temperature and wavelength dependence of the electroabsorption modulator module. Thermal stability of the module was very high. Controllability of the driving voltage has been demonstrated by changing the module temperature. The optimum Eg at 20°C has been estimated to be 48-55 meV, in consideration of small insertion loss and low driving voltage

Keywords

III-V semiconductors; deformation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical losses; 20 C; 48 to 55 meV; InGaAsP; InGaAsP electro-absorption modulator module; driving voltage; electroabsorption modulator module; low driving voltage; module temperature; optimum Eg; small insertion loss; temperature dependence; thermal stability; wavelength dependence; High speed optical techniques; Insertion loss; Laser stability; Optical fiber polarization; Optical modulation; Optical solitons; Packaging; Photonic band gap; Temperature dependence; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522199

Filename

522199