Title :
Theoretical analysis of enhanced electroabsorption change due to light-hole subband transition in lattice-matched wide quantum wells
Author :
Yamanaka, Takayuki ; Wakita, Koichi ; Yokoyama, Kiyoyuki
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
In this work, we have studied theoretically the enhancement of TE-polarized electroabsorption EA change in lattice-matched InGaAsP MQW structures. It is demonstrated that the light-hole subband transition plays the dominant role in the enhanced EA change in wide quantum wells
Keywords :
III-V semiconductors; carrier mobility; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InGaAsP; TE-polarized electroabsorption EA change; enhanced EA change; enhanced electroabsorption change; lattice-matched InGaAsP MQW structures; lattice-matched wide quantum wells; light-hole subband transition; theoretical analysis; Absorption; Chirp modulation; Electron optics; Frequency modulation; Optical modulation; Oscillators; Potential well; Quantum mechanics; Quantum well devices; Stark effect;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522200
