Title :
Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields
Author :
Sahara, Richard T. ; Matsuda, M. ; Morito, K. ; Soda, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A new quantum structure is proposed, the type 1.5 quantum well, which can be designed to modulate the optical transition oscillator strength with a very low field. The peaking of the oscillator strength and absorption with a low applied field is a practical advantage for modulator applications to reduce the drive voltage and increase the maximum absorption
Keywords :
band structure; electro-optical modulation; electroabsorption; optical design techniques; oscillator strengths; semiconductor quantum wells; drive voltage; electroabsorption modulation; low applied field; low electric fields; maximum absorption; modulator applications; optical transition oscillator strength modulation; oscillator strength peaking; quantum structure; type 1.5 coupled quantum wells; very low field; Absorption; Charge carrier processes; Indium phosphide; Laboratories; Optical design; Optical device fabrication; Optical materials; Optical modulation; Voltage-controlled oscillators; Wave functions;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522201
