Title :
InGaAs/InAlAs/InP 1.55 μm quantum wells with mass-dependent width-a useful building block for polarization-independent optical modulation
Author :
Hamakawa, A. ; Ishihara, K. ; Yamaguchi, T. ; Nakano, Y. ; Tada, K.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
We describe a new quantum well structure in 1.55 μm materials where effective width of the well is mass-dependent. This is advantageous for polarization-independent modulation of 1.55 μm optical waves. An InGaAs/InAlAs multiple quantum well p-i-n diode with such a structure on an InP substrate has been fabricated for the first time, and its photocurrent spectra have been measured. We have observed a larger Stark shift for light-hole-related exciton than that of heavy-hole exciton, which never happened in the conventional quantum wells. Therefore, the same amount of Stark shift for both holes should be possible by adjusting such a quantum well structure with mass-dependent width
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; excitons; gallium arsenide; indium compounds; light polarisation; p-i-n photodiodes; quantum confined Stark effect; semiconductor quantum wells; 1.55 μm optical waves; 1.55 μm quantum wells; 1.55 mum; InGaAs-InAlAs-InP; InGaAs/InAlAs multiple quantum well p-i-n diode; InGaAs/InAlAs/InP; InP substrate; Stark shift; building block; heavy-hole exciton; larger Stark shift; light-hole-related exciton; mass-dependent; mass-dependent width; photocurrent spectra; polarization-independent modulation; polarization-independent optical modulation; quantum well structure; Excitons; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical materials; Optical modulation; Optical polarization; P-i-n diodes; Photoconductivity; Time measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522202
