DocumentCode :
3134993
Title :
Controlled beam dry etching of InP by using Br2-N2 gas
Author :
Oku, Satoshi ; Shibata, Yasuo ; Ochiai, Kenichi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fYear :
1995
fDate :
9-13 May 1995
Firstpage :
561
Lastpage :
564
Abstract :
When Indium phosphide dry etching is carried out using a reactive beam extracted from Br2-N2 mixture gas discharge plasma, two distinct types of etching mechanisms come into play as the Br2 gas pressure is changed. Smooth vertical side walls can be obtained at low Br2 gas pressure, where the etching rate has no temperature dependence, while undercutting with a temperature dependent etching rate is seen at high Br2 gas pressure. An analysis of the plasma discharge currents reveals that neutralized Br species generated by the discharge of Br2 gas itself form the undercut. A waveguide corner mirror with less than 1 dB loss can be made by using an etching beam with no neutralized Br species
Keywords :
III-V semiconductors; indium compounds; optical fabrication; sputter etching; Br2-N2 gas mixture; Br2; InP; N2; indium phosphide; plasma discharge; reactive beam dry etching; temperature dependence; undercutting; vertical side walls; waveguide corner mirror; Dry etching; Gases; Indium phosphide; Particle beams; Plasma applications; Plasma measurements; Plasma properties; Plasma temperature; Sputter etching; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
Type :
conf
DOI :
10.1109/ICIPRM.1995.522205
Filename :
522205
Link To Document :
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