Title :
Dielectric waveguides fabricated on InP by photochemical process for OEICs
Author :
Sayah, A. ; Nissim, Y.I.
Author_Institution :
Lab. de Bagneux, CNET, France
Abstract :
A complete Si-based dielectric waveguides technology fabricated on InP substrates has been developed. The lowest attenuation measured at 1.5 μm wavelength is 2 dB/cm without any high temperature annealing of the waveguide structure. This result is due to the quality of the material obtained by new deposition techniques, namely RTCVD and UVCVD. These deposition techniques have proved their compatibility with brittle materials such as InP. They are also compatible with waveguide fabrication at the end of a device or circuit process. The objective is now to integrate this technology into simple OEICs
Keywords :
III-V semiconductors; chemical vapour deposition; indium compounds; integrated optoelectronics; optical fabrication; optical waveguides; photochemistry; rapid thermal processing; 1.5 micron; InP; InP substrates; OEICs; RTCVD; Si; UVCVD; attenuation; dielectric waveguides; fabrication; photochemical deposition; Annealing; Attenuation measurement; Dielectric materials; Dielectric measurements; Dielectric substrates; Indium phosphide; Optical device fabrication; Photochemistry; Temperature; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522206
