Dielectric waveguides fabricated on InP by photochemical process for OEICs

Author

Sayah, A. ; Nissim, Y.I.

Author_Institution

Lab. de Bagneux, CNET, France

fYear

1995

fDate

9-13 May 1995

Firstpage

565

Lastpage

568

Abstract

A complete Si-based dielectric waveguides technology fabricated on InP substrates has been developed. The lowest attenuation measured at 1.5 μm wavelength is 2 dB/cm without any high temperature annealing of the waveguide structure. This result is due to the quality of the material obtained by new deposition techniques, namely RTCVD and UVCVD. These deposition techniques have proved their compatibility with brittle materials such as InP. They are also compatible with waveguide fabrication at the end of a device or circuit process. The objective is now to integrate this technology into simple OEICs

Keywords

III-V semiconductors; chemical vapour deposition; indium compounds; integrated optoelectronics; optical fabrication; optical waveguides; photochemistry; rapid thermal processing; 1.5 micron; InP; InP substrates; OEICs; RTCVD; Si; UVCVD; attenuation; dielectric waveguides; fabrication; photochemical deposition; Annealing; Attenuation measurement; Dielectric materials; Dielectric measurements; Dielectric substrates; Indium phosphide; Optical device fabrication; Photochemistry; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522206

Filename

522206