Title :
First order gratings for gain coupled GaInAsP DFB-lasers made by maskless focused ion beam patterning
Author :
Reithmaier, J.P. ; Orth, A. ; Muller, J. ; Forchel, A. ; Weber, J. ; Gyuro, I. ; Zielinski, E.
Author_Institution :
Wurzburg Univ., Germany
Abstract :
First order gratings in GaInAsP laser structures were defined by maskless focused ion beam implantation. The optically pumped devices show laser operation at 77 and 300 K. All lasers operate in a single longitudinal mode which is typical for the gain coupled distributed feedback effect. The implanted gratings are thermally stable up to 700°C and are suitable for an overgrowth process by metal organic vapour phase epitaxy
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; ion implantation; optical fabrication; semiconductor lasers; 300 K; 700 C; 77 K; GaInAsP; first order gratings; gain coupled distributed feedback lasers; maskless focused ion beam implantation; metal organic vapour phase epitaxy; optically pumped devices; overgrowth; single longitudinal mode; thermal stability; Distributed feedback devices; Gratings; Ion beams; Laser feedback; Laser modes; Optical devices; Optical feedback; Optical pumping; Particle beam optics; Pump lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522207
