Title :
Temperature sensors modeling for smart power ICs
Author :
Petrosyants, K.O. ; Rjabov, N.I.
Author_Institution :
Moscow State Inst. of Electron. & Math., Tech. Univ., Moscow, Russia
Abstract :
The computational model of the temperature sensors integrated on the IC chip with power transistors is developed. The 2D/3D problem of sensor placement is mathematically described by the classic heat transfer equation coupled with the equation for current density distribution. It is shown that parasitic effects of sensor current displacement and thermo-emf generation resulting from a temperature gradients (Seebeck effect) must be taken into account. For this purpose the special differential equation is introduced. The examples of point- and strip-like temperature sensors modeling for power BJTs and ICs are demonstrated.
Keywords :
current density; current distribution; differential equations; heat transfer; integrated circuit modelling; power bipolar transistors; power integrated circuits; sensor placement; temperature sensors; 2D-3D problem; current density distribution; differential equation; heat transfer equation; point-like temperature sensor modeling; power BJT; power transistors; sensor current displacement; smart power IC; strip-like temperature sensor modeling; temperature gradients; thermo-EMF generation; Equations; Integrated circuit modeling; Mathematical model; Temperature distribution; Temperature measurement; Temperature sensors; Seebeck effect; Temperature sensors; heat transfer; power transistors; smart power IC; temperature distribution;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2011 27th Annual IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-61284-740-5
DOI :
10.1109/STHERM.2011.5767194
