Title :
Surface damage on InP induced by photo- and plasma-assisted chemical vapor deposition of passivation films
Author :
Hashizume, Tamotsu ; Hasegawa, Hideki
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
Process-induced near-surface defects in InP introduced during PECVD, photoand ECR-assisted techniques for insulator deposition were studied using Schottky DLTS, MIS DLTS and MIS C-V techniques. Interface states and near-surface bulk traps were clearly distinguished by the MIS DLTS technique. The spatial distribution of the near-surface traps within the deposited insulator were determined by analyzing MIS DLTS and C-V data. The analysis showed that photo CVD SiO2 deposition is superior to PECVD SiO2 deposition due to absence of process-induced bulk traps and to smaller density of interface states with a narrower spatial distribution
Keywords :
III-V semiconductors; MIS structures; Schottky barriers; chemical vapour deposition; deep level transient spectroscopy; deep levels; electron traps; indium compounds; interface states; passivation; plasma CVD; semiconductor-insulator boundaries; silicon compounds; surface states; III-V semiconductor; InP; InP-SiO2; MIS C-V techniques; MIS DLTS; Schottky DLTS; insulator deposition; interface states; near-surface bulk traps; passivation films; photo-assisted chemical vapor deposition; plasma-assisted chemical vapor deposition; process-induced near-surface defects; spatial distribution; surface damage; Capacitance-voltage characteristics; Chemical vapor deposition; Gold; Indium phosphide; Insulation; Interface states; Passivation; Plasma chemistry; Schottky barriers; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522208
