Title :
Low frequency noise behavior of SiGe BiCMOS HBT and their related phase noise performances
Author :
Regis, M. ; Flotats, E. ; Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Llopis, O. ; Tournier, E. ; Bary, L. ; Plana, R.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
This paper deals with low frequency noise investigation in SiGe BiCMOS devices. We found that five 1/f sources are involved. When appropriate design is carried out 1/f corner noise frequency lower than 1/kHz has been obtained. These results have been validated through a 4 GHz oscillator featuring a very low phase noise magnitude
Keywords :
1/f noise; BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit modelling; integrated circuit noise; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; 1/f sources; 4 GHz; LF noise behavior; SiGe; SiGe BiCMOS HBT; low frequency noise behavior; low phase noise oscillator; phase noise performance; BiCMOS integrated circuits; CMOS technology; Current measurement; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Phase noise; Silicon germanium;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925946
