Low frequency noise behavior of SiGe BiCMOS HBT and their related phase noise performances

Author

Regis, M. ; Flotats, E. ; Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Llopis, O. ; Tournier, E. ; Bary, L. ; Plana, R.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

2000

fDate

2000

Firstpage

771

Lastpage

775

Abstract

This paper deals with low frequency noise investigation in SiGe BiCMOS devices. We found that five 1/f sources are involved. When appropriate design is carried out 1/f corner noise frequency lower than 1/kHz has been obtained. These results have been validated through a 4 GHz oscillator featuring a very low phase noise magnitude

Keywords

1/f noise; BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit modelling; integrated circuit noise; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; 1/f sources; 4 GHz; LF noise behavior; SiGe; SiGe BiCMOS HBT; low frequency noise behavior; low phase noise oscillator; phase noise performance; BiCMOS integrated circuits; CMOS technology; Current measurement; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Phase noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925946

Filename

925946