Title :
Characterization of electron traps in AlInAs treated with plasma
Author :
Sugino, T. ; Hirata, D. ; Yamamura, I. ; Matsuda, K. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Electron traps have been investigated for MBE grown n-AlInAs by isothermal capacitance transient spectroscopy measurement. Two traps, EO1(Ec-0.44 eV) and EO2(Ec-0.52 eV), appear for oxygen-plasma treated sample in addition to E1(Ec-0.47 eV) and E2(Ec-0.69 eV) traps detected for untreated (as-etched) sample. It is found that a reduction in the densities of the four traps occurs due to annealing subsequently after oxygen plasma treatment. The donor concentration, ND-NA, is reduced by annealing after oxygen plasma treatment. The compensation effect may be attributed to acceptor-like defect centers created by plasma process
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; annealing; capacitance; deep level transient spectroscopy; electron traps; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface states; surface treatment; 0.2 torr; 200 K; 250 C; 350 C; 350 K; AlInAs; AlInAs-InP; E1 traps; E2 traps; EO1 trap; EO2 trap; III-V semiconductor; MBE grown; Richardson plot; Schottky contacts; acceptor-like defect centers; annealing; as-etched sample; compensation effect; deep traps; donor concentration; electron traps; isothermal capacitance transient spectroscopy; n-type; plasma treated sample; trap density; true barrier height; Annealing; Capacitance measurement; Electron traps; Isothermal processes; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Plasma properties; Plasma temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522210
