Title :
30 GHz active mixer in a Si/SiGe bipolar technology
Author :
Wurzer, Martin ; Meister, Thomas F. ; Hackl, Sabine ; Knapp, Herbert ; Treitinger, Ludwig
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
In this paper we present a 30 GHz active mixer fabricated in a 80 GHz fT silicon-germanium bipolar technology. It is based on a Gilbert cell and is capable of broadband operation down to DC. The mixer draws 2 mA from a single supply voltage of 4.9 V. It shows a conversion gain of more than 5.9 dB up to 30 GHz and a double-sideband noise figure of better than 10.2 dB up to 18 GHz
Keywords :
Ge-Si alloys; MMIC mixers; bipolar MIMIC; bipolar MMIC; elemental semiconductors; integrated circuit noise; millimetre wave mixers; semiconductor materials; silicon; 10.2 dB; 18 to 80 GHz; 2 mA; 30 GHz; 4.9 V; 5.9 dB; Gilbert cell; Si-SiGe; Si/SiGe bipolar technology; active mixer; broadband operation; single supply voltage; Circuits; Frequency conversion; Frequency measurement; Germanium silicon alloys; Noise figure; Postal services; Semiconductor device measurement; Silicon germanium; Ultrasonic variables measurement; Voltage;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925948
