Title :
Low-power synchronous oscillator in SiGe technology for UMTS 2000 applications
Author :
Deval, Y. ; Begueret, J-B ; Fouillat, P. ; Belot, D.
Author_Institution :
IXL Lab., Bordeaux, France
Abstract :
The design of a 2 GHz Synchronous Oscillator (SO) dedicated to UMTS 2000 third generation mobile phones is presented. Taking advantage of a 0.35 μm non-selective epitaxy growth (NSEG) SiGe technology, this SO is suitable for a low-power double-loop frequency synthesizer. Simulation results highlight the good trade-off obtained between high frequency characteristics and power consumption, which is of strategic importance for portable electronics
Keywords :
Ge-Si alloys; MMIC oscillators; UHF integrated circuits; UHF oscillators; cellular radio; frequency synthesizers; low-power electronics; phase locked loops; synchronisation; 0.35 micron; 2 GHz; 2.7 V; 3 mA; 8.1 mW; PLL; SiGe; SiGe technology; UMTS 2000 applications; double-loop frequency synthesizer; high frequency characteristics; low-power frequency synthesizer; low-power synchronous oscillator; nonselective epitaxy growth technology; portable electronics; power consumption; third generation mobile phones; 3G mobile communication; Bandwidth; Frequency synchronization; Frequency synthesizers; Germanium silicon alloys; Mobile handsets; Oscillators; Phase locked loops; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925949
