Title :
Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications
Author :
Itaya, Kazuhiko ; Mondry, Mark J. ; Floyd, Philip D. ; Coldren, Larry A. ; Merz, James L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We investigated impurity-induced disordering (IID) in compressively strained AlGaInAs multi quantum wells (MQWs) on InP substrate by Zn diffusion. Complete disordering of AlGaInAs MQW, enhanced by strain, was observed even at the low temperature of 400°C. On the other hand, unstrained MQW was not completely disordered below 500°C. The measured hole concentration of the Zn diffused layer at 400°C was as low as 3×1018 cm-3. The IID lasers were also fabricated and characterized. No significant optical loss was observed in these lasers
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; diffusion; energy gap; gallium arsenide; impurities; impurity states; indium compounds; interface states; optical losses; photoluminescence; quantum well lasers; semiconductor doping; semiconductor quantum wells; 1.3 to 1.5 micron; 400 C; AlGaInAs-InP:Zn; DH laser; III-V semiconductor; MBE layers; MQW lasers; Zn diffusion; annealing; compressively strained MQW; diffused layer; effective bandgap energy change; hole concentration; impurity-induced disordering; intermixing; long wavelength optoelectronic application; low temperature; photoluminescence; strained layer; threshold current; Annealing; Capacitive sensors; Energy measurement; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Quantum well devices; Temperature; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522213
