Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications

Author

Itaya, Kazuhiko ; Mondry, Mark J. ; Floyd, Philip D. ; Coldren, Larry A. ; Merz, James L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

593

Lastpage

596

Abstract

We investigated impurity-induced disordering (IID) in compressively strained AlGaInAs multi quantum wells (MQWs) on InP substrate by Zn diffusion. Complete disordering of AlGaInAs MQW, enhanced by strain, was observed even at the low temperature of 400°C. On the other hand, unstrained MQW was not completely disordered below 500°C. The measured hole concentration of the Zn diffused layer at 400°C was as low as 3×10¹⁸ cm^-3. The IID lasers were also fabricated and characterized. No significant optical loss was observed in these lasers

Keywords

III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; diffusion; energy gap; gallium arsenide; impurities; impurity states; indium compounds; interface states; optical losses; photoluminescence; quantum well lasers; semiconductor doping; semiconductor quantum wells; 1.3 to 1.5 micron; 400 C; AlGaInAs-InP:Zn; DH laser; III-V semiconductor; MBE layers; MQW lasers; Zn diffusion; annealing; compressively strained MQW; diffused layer; effective bandgap energy change; hole concentration; impurity-induced disordering; intermixing; long wavelength optoelectronic application; low temperature; photoluminescence; strained layer; threshold current; Annealing; Capacitive sensors; Energy measurement; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Quantum well devices; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522213

Filename

522213