Morphological and electrical characterization of Al/Ni/n-InP contacts with tapered Ni-layer [for MESFET]

Author

Miyazaki, S. ; Lin, T.-C. ; Nishida, C. ; Kaibe, H.T. ; Okummra, T.

Author_Institution

Dept. of Electron. & Inf. Eng., Tokyo Metropolitan Univ., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

601

Lastpage

604

Abstract

We show how a thin Ni film as the first layer of Al/Ni/InP contacts improved the surface morphology after rapid thermal annealing (RTA). In order to find the optimum fabrication parameters (film thickness, annealing temperature and time, etc.), we have fabricated a unique sample in which the thickness of the inserted Ni layer tapered off in space. The electrical properties were evaluated by using scanning internal-photoemission microscopy (SIPM) which is capable of “mapping” the Schottky diode characteristics

Keywords

III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; aluminium; nickel; optical microscopy; photoemission; rapid thermal annealing; semiconductor device metallisation; semiconductor-metal boundaries; surface structure; 0 to 30 sec; 450 to 550 C; Al; Al-Ni-InP; III-V semiconductor; InP; MESFET; Ni; Schottky barrier height; Schottky diode characteristics; annealing temperature; annealing time; contact fabrication; electrical characterization; film thickness; morphological characterization; multilayer contacts; optimum fabrication parameters; rapid thermal annealing; scanning internal-photoemission microscopy; surface morphology; tapered layer; Artificial intelligence; Contacts; Indium phosphide; Rapid thermal annealing; Rough surfaces; Schottky barriers; Substrates; Surface morphology; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522215

Filename

522215