Title :
Measurement and characterization of HEMT dynamics
Author :
Parker, Anthony E. ; Rathmell, James G.
Author_Institution :
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
Large-signal dynamic behaviour of HEMTs is characterized for all bias points by bias-dependent pinch-off, gain, and drain feedback parameters. A novel drain current model uses these parameters to describe the dispersion effects. The model and parameters, presented here, give an insight into the operation of HEMTs
Keywords :
high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; HEMT characterization; HEMT dynamics; bias points; bias-dependent pinchoff parameters; dispersion effects; drain current model; drain feedback parameters; gain parameters; large-signal dynamic behaviour; Current measurement; Dispersion; Electrons; Feedback; HEMTs; Intrusion detection; Power dissipation; Pulse measurements; Temperature; Thermal resistance;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925962
