Improvement of resistivity of phosphorous nitride films deposited at 100°C on InP substrate

Author

Matsumoto, Y. ; Suzuki, T. ; Haga, K. ; Sasaki, H. ; Sakuma, M. ; Hanajiri, Tatsuro ; Sugano, T. ; Katoda, T.

Author_Institution

Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

609

Lastpage

611

Abstract

Phosphorous nitride (PN) films were deposited on InP as gate-insulator films at 100°C by photon-assisted chemical vapor deposition (PACVD) method using PCl₃ and NH₃ as source gasses, and their electrical and optical properties were investigated. The electrical leakage resistance of PN films was found to depend on the amount of phosphorous within PN films which was changed by the ratio of source gases (PCl₃/NH₃). As a result, even at 100°C, PN films with resistivity of about 10⁹-10 ¹⁰ Ω·cm under high electric field (1 MV/cm) were obtained without post deposition annealing by optimizing the source gas ratio

Keywords

III-V semiconductors; MIS devices; MIS structures; chemical vapour deposition; chemical variables control; electrical resistivity; indium compounds; leakage currents; phosphorus compounds; semiconductor-insulator boundaries; 100 C; 10⁹ to 10¹⁰ ohm; 133 Pa; 60 to 120 min; I-V characteristics; III-V semiconductor; InP-PN; MIS devices; MIS diodes; PCl₃-NH₃; XPS; deposition rate control; electrical properties; gate-insulator films; high electric field; leakage resistance; nitride films; optical properties; photon-assisted chemical vapor deposition; resistivity improvement; source gas ratio; Conductive films; Conductivity; Diodes; Indium phosphide; Leakage current; Light sources; Optical films; Particle beam optics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522217

Filename

522217