Title :
S-parameter simulation with a new MOSFET model
Author :
Qu, Guoli ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements
Keywords :
MOSFET; S-parameters; SPICE; UHF field effect transistors; microwave field effect transistors; semiconductor device models; DC parameters; IMD prediction; MOSFET model; S-parameter simulation; SPICE3f4; higher-order continuous model; small-signal applications; Capacitance measurement; Current measurement; Diodes; Electronic equipment testing; Electronic mail; Equations; MOSFET circuits; Performance evaluation; Power MOSFET; Scattering parameters;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925963
