Title :
Focused ion beam implantation-induced disordering in InGaAsP MQW heterostructures [studied by photoluminescence]
Author :
Elenkrig, B.B. ; Yang, J. ; Cassidy, D.T. ; Bruce, D.M. ; Lakshmi, B. ; Champion, G.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Results of an investigation of the effects of focused ion beam (FIB) implantation-induced intermixing of an InGaAsP-based multiple quantum well (MQW) structure on the room temperature photoluminescence (PL) are presented. The technique of spatially, spectrally and polarization resolved PL was used to study the process of QWs intermixing by Si+, Be+ and B+. It was found that implantation in a narrow (about 100 nm) line leads to an enhancement of PL yield. A qualitative explanation for this enhancement is given in terms of spatial bandstructure bending due to a doping effect in a narrow region
Keywords :
III-V semiconductors; chemical interdiffusion; focused ion beam technology; gallium arsenide; indium compounds; ion beam mixing; ion implantation; optical fabrication; photoluminescence; quantum well lasers; rapid thermal annealing; semiconductor quantum wells; B+; Be+; FIB implantation-induced intermixing; III-V semiconductor; InGaAsP; InGaAsP:B; InGaAsP:Be; InGaAsP:Si; MQW heterostructures; MQW lasers; RTA; Si+; implantation-induced disordering; lattice matched structure; n-type doped region; narrow region doping effect; polarization resolved; room temperature photoluminescence; spatial bandstructure bending; spatially resolved; spectrally resolved; yield enhancement; Doping; Ion beams; Optical pumping; Optical refraction; Optical variables control; Photoluminescence; Photonic band gap; Quantum dot lasers; Quantum well devices; Spatial resolution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522218
