Title :
Fabrication of 60 nm-pitch ordered InP pillars by EB-lithography and anodization
Author :
Takizawa, T. ; Nakahara, M. ; Kikuno, E. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
We obtained 60 nm-pitch ordered InP triangle vertical pillars with high density of around 50% by combining electron-beam (EB) lithography and anodization techniques. Furthermore, adopting the dry-etching transfer onto SiO2, we obtained 40 nm-pitch ordered pillars and observed photoluminescence intensity comparable to that from bulk InP substrate that indicates negligible non-radiative recombination
Keywords :
III-V semiconductors; anodisation; electron beam lithography; indium compounds; masks; nanotechnology; photoluminescence; semiconductor quantum wires; sputter etching; 60 nm; III-V semiconductor; InP; SiO2; anodization; dot patterned mask; dry-etching transfer; electron-beam lithography; fabrication; high density; nanotechnology; ordered pillars; photoluminescence intensity; quantum wires; size-ordered pillars; triangle vertical pillars; Etching; Fabrication; Indium phosphide; Lithography; Optical buffering; Optical devices; Optical films; Quantum well devices; Resists; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522222
