Title :
The effects of nonlinear CBC on the linearity of HBT
Author :
Kim, Woonyun ; Chung, Minchul ; Lee, Kyungho ; Yang, Youngoo ; Kang, Sanghoon ; Kim, Bumman
Author_Institution :
Dept. of Electr. & Electron. Eng., POSTECH, Kyoungbook, South Korea
Abstract :
It is commonly known that CBC is a very strong nonlinear source in the HBT. To investigate the contribution of the nonlinear CBC to the linearity, HBTs with a punch-through collector and normal collector were fabricated. At 2 GHz, the punch-through HBT and normal one exhibit the power gain of 16.6 dB and 16.9 dB, output power of 28.9 dBm and 28.6 dBm, and PAE of 51% and 59%, respectively at 1 dB gain compression point. Two-tone tests were carried out for both power devices. The normal and punch-through HBTs showed IMD3 (third-order intermodulation distortion) levels of -25 dBc and -20 dBc, respectively at 1 dB gain compression point; for both cases, IMD3 dropped to -30 dBc at 1.6 dB output power back off. Because CBC of HBT with punch-through is linear at small input signal, the IP3 power of the HBT is higher than that of the normal HBT by 15 dB. We found that RF grounding at the collector terminal is an efficient method for third-order IM power reduction
Keywords :
UHF bipolar transistors; capacitance; heterojunction bipolar transistors; intermodulation distortion; power bipolar transistors; 16.6 dB; 16.9 dB; 2 GHz; 51 percent; 59 percent; HBT linearity; IMD3 levels; RF grounding; base-collector capacitance; collector terminal grounding; normal collector; power devices; punch-through collector; third-order IM power reduction; third-order IMD levels; third-order intermodulation distortion; two-tone tests; Gain; Gallium arsenide; Grounding; Heterojunction bipolar transistors; Intermodulation distortion; Linearity; Power generation; Radio frequency; Radiofrequency amplifiers; Testing;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925969
