Title :
A two-dimensional analytical model for thin film fully depleted surrounding gate (SGT) MOSFET
Author :
Kranti, Abhinav ; Haldar, S. ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
Abstract :
In the present paper an analytical two-dimensional model has been developed for threshold voltage, I-V characteristics and drain conductance of thin film fully depleted short channel surrounding gate MOSFET using Laplace reduction technique. The proposed model incorporates the effect of source/drain resistance, field dependent mobility, velocity saturation and DIBL effect. The results obtained are verified with simulated data
Keywords :
MOSFET; carrier mobility; semiconductor device models; thin film transistors; 2D analytical model; DIBL effect; I-V characteristics; Laplace reduction technique; SGT MOSFET; drain conductance; field dependent mobility; fully depleted surrounding gate MOSFET; short channel MOSFET; source/drain resistance; thin film MOSFET; threshold voltage; two-dimensional analytical model; velocity saturation; Analytical models; Energy consumption; MOSFET circuits; Physics; Poisson equations; Semiconductor films; Silicon; Threshold voltage; Transistors; Ultra large scale integration;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925970
