Title :
High-quality Zn-diffused InP-related materials fabricated by the open-tube technique
Author :
Tsuchiya, T. ; Taniwatari, T. ; Haga, T. ; Kawano, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We evaluate, for the first time, the crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P 0.45/InP structure created by the open-tube technique. We also investigate the intermixing at the heterointerface of a Zn diffused In0.47Ga0.53As/InP multiple quantum well structure
Keywords :
III-V semiconductors; chemical interdiffusion; diffusion; gallium arsenide; indium compounds; semiconductor doping; semiconductor heterojunctions; semiconductor quantum wells; zinc; In0.47Ga0.53As-InP:Zn; In0.76Ga0.24As0.55P0.45 -InP:Zn; InP-related materials; Zn diffusion; crystal quality; fabrication; heterointerface; intermixing; multiple quantum well; open-tube technique; Atomic layer deposition; Epitaxial growth; Etching; Hydrogen; Indium phosphide; Inductors; Quantum well devices; Substrates; Tensile stress; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522231
