DocumentCode
3135684
Title
High-quality Zn-diffused InP-related materials fabricated by the open-tube technique
Author
Tsuchiya, T. ; Taniwatari, T. ; Haga, T. ; Kawano, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
664
Lastpage
667
Abstract
We evaluate, for the first time, the crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P 0.45/InP structure created by the open-tube technique. We also investigate the intermixing at the heterointerface of a Zn diffused In0.47Ga0.53As/InP multiple quantum well structure
Keywords
III-V semiconductors; chemical interdiffusion; diffusion; gallium arsenide; indium compounds; semiconductor doping; semiconductor heterojunctions; semiconductor quantum wells; zinc; In0.47Ga0.53As-InP:Zn; In0.76Ga0.24As0.55P0.45 -InP:Zn; InP-related materials; Zn diffusion; crystal quality; fabrication; heterointerface; intermixing; multiple quantum well; open-tube technique; Atomic layer deposition; Epitaxial growth; Etching; Hydrogen; Indium phosphide; Inductors; Quantum well devices; Substrates; Tensile stress; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522231
Filename
522231
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