Title :
High-spatial-resolution characterization of residual strain in commercial LEC-grown InP(100) wafers
Author :
Fukuzawa, M. ; Yamada, M.
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
Abstract :
By using a high-spatial-resolution scanning infrared polariscope, in-plane components of residual strain have been characterized quantitatively in 2"φ LEC-grown Fe-doped InP (100) wafers. Their two-dimensional distribution maps reveal characteristic fine structures such as slip-like patterns originated from crystallographic glides during the crystal growth process, and highly-strained spots and filaments due to inclusions or voids inside the wafer, or due to scratches on the surface. Solidification factor dependence of residual strain is also examined together with etch pit density and resistivity
Keywords :
III-V semiconductors; crystal growth from melt; inclusions; indium compounds; internal stresses; semiconductor growth; slip; voids (solid); Fe-doped InP (100) wafers; InP; LEC crystal growth; crystallographic glide; etch pit density; filaments; inclusions; residual strain; resistivity; scanning infrared polariscopy; scratches; slip; solidification factor; spatial resolution; spots; two-dimensional distribution; voids; Capacitive sensors; Crystallization; Crystallography; Indium phosphide; Photoelasticity; Polarization; Residual stresses; Spatial resolution; Strain measurement; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522234
