Title :
Single-step annealing of Be and Si implants in S.I. InP to minimize Be redistribution in the completed p+/n junctions
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The electrical characteristics of p+/n junctions in semi-insulating InP, formed by using a deep Si implant and a shallow Be implant, are reported. Both the electrical and atomic profiles found by the investigation indicate that the anneal-induced redistribution of Be can be prevented if the Be and Si implants are activated in a single-step anneal. In addition it was found that prolonged anneal time and elevated temperatures have significantly reduced Be compensation near the surface
Keywords :
III-V semiconductors; annealing; beryllium; indium compounds; ion implantation; p-n junctions; silicon; InP:Be-InP:Si; compensation; electrical characteristics; implants; p+/n junctions; redistribution; semi-insulating InP; single-step annealing; Atomic measurements; Implants; Indium phosphide; Ion implantation; Iron; JFETs; Laboratories; Microwave devices; Rapid thermal annealing; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522236
