• DocumentCode
    3135755
  • Title

    Single-step annealing of Be and Si implants in S.I. InP to minimize Be redistribution in the completed p+/n junctions

  • Author

    Molnar, B.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    682
  • Lastpage
    685
  • Abstract
    The electrical characteristics of p+/n junctions in semi-insulating InP, formed by using a deep Si implant and a shallow Be implant, are reported. Both the electrical and atomic profiles found by the investigation indicate that the anneal-induced redistribution of Be can be prevented if the Be and Si implants are activated in a single-step anneal. In addition it was found that prolonged anneal time and elevated temperatures have significantly reduced Be compensation near the surface
  • Keywords
    III-V semiconductors; annealing; beryllium; indium compounds; ion implantation; p-n junctions; silicon; InP:Be-InP:Si; compensation; electrical characteristics; implants; p+/n junctions; redistribution; semi-insulating InP; single-step annealing; Atomic measurements; Implants; Indium phosphide; Ion implantation; Iron; JFETs; Laboratories; Microwave devices; Rapid thermal annealing; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522236
  • Filename
    522236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3135755