• DocumentCode
    3135851
  • Title

    Atomic ordering in strained layer multi-quantum well structure

  • Author

    Otsuka, Nobuyuki ; Kito, Masahiro ; Yabuuchi, Yasufumi ; Ishino, Masato ; Matsui, Yasushi

  • Author_Institution
    Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    701
  • Lastpage
    704
  • Abstract
    The dependence of photoluminescence (PL) characteristics on both SL-MQW structure and epitaxial growth condition is studied. The degradation of PL characteristics in the SL-MQW is confirmed as a broadening of PL linewidth and an unusual temperature-dependence of PL peak wavelength. By using a high-resolution transmission electron microscope (HRTEM), the structure of atomic ordering is demonstrated over entire barrier layers of the SL-MQW structure with degraded PL characteristics. By increasing growth temperature, elimination of the ordering structure as well as improvement of the PL characteristics have been confirmed even in a SL-MQW structure a with large amount of strain
  • Keywords
    photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line broadening; transmission electron microscopy; vapour phase epitaxial growth; HRTEM; PL linewidth broadening; PL peak wavelength; SL-MQW structure; atomic ordering; barrier layers; degradation; degraded PL characteristics; epitaxial growth condition; growth temperature; high-resolution transmission electron microscope; ordering structure; photoluminescence characteristics; strained layer multi-quantum well structure; temperature-dependence; Atomic layer deposition; Buffer layers; Capacitive sensors; Degradation; Epitaxial growth; Indium phosphide; Substrates; Temperature measurement; Transmission electron microscopy; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522240
  • Filename
    522240