DocumentCode :
3135888
Title :
Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics
Author :
Clarke, A.L. ; Akmal, M. ; Lees, J. ; Tasker, P.J. ; Benedikt, J.
Author_Institution :
Cardiff Sch. of Eng., Cardiff Univ., Cardiff, UK
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1114
Lastpage :
1117
Abstract :
A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate bias as design tools on the performance of the design and proposes a strategy that utilizes their positive effect as well as considering the subsequent impact on device scaling. This was carried out on GaAs pHEMT devices from commercial processes that obtained measured peak efficiencies of 90.1% at P1dB in a class-B bias.
Keywords :
circuit optimisation; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; GaAs pHEMT devices; design tools; device optimization; device scaling; gate bias; higher harmonics; performance degradation; power amplifiers; Design optimization; Frequency; Gallium arsenide; Harmonic analysis; Power amplifiers; Power engineering and energy; Power measurement; Power system harmonics; Time measurement; Velocity measurement; Power amplifiers; class-F; inverse class-F; load-pull; microwave measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517222
Filename :
5517222
Link To Document :
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