DFB lasers integrated with Mach-Zehnder optical modulator and a power booster fabricated by selective area growth MOVPE technique

Author

Tanbun-Ek, T. ; Sciortino, P.F., Jr. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

713

Lastpage

716

Abstract

We have demonstrated the first monolithic integration of a DFB laser with a Mach-Zehnder type modulator fabricated by the selective area MOVPE growth technique and operating at 1.55 μm. A spatially resolved micro photoluminescence setup was used to characterize the crystal quality. We have achieved a low loss and near 3 dB Y-branch power divider in the structure with the modulator achieving an attenuation up to 17 dB and a π phase shift voltage of 2 V

Keywords

Mach-Zehnder interferometers; distributed feedback lasers; electro-optical modulation; integrated optics; photoluminescence; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; π phase shift voltage; 1.55 mum; 17 dB; 2 V; 3 dB; DFB lasers; Mach-Zehnder optical modulator; Y-branch power divider; attenuation; crystal quality; low loss; monolithic integration; power booster; selective area growth MOVPE technique; spatially resolved micro photoluminescence; Epitaxial growth; Epitaxial layers; Integrated optics; Monolithic integrated circuits; Optical attenuators; Optical modulation; Phase modulation; Photoluminescence; Power dividers; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522243

Filename

522243