DocumentCode :
3135969
Title :
Adjustable supply voltages and refresh cycle for process variations and temperature changing adaptation in DRAM to minimize power consumption
Author :
Tran, Le-Nguyen ; Kurdahi, Fadi J. ; Eltawil, Ahmed M.
Author_Institution :
EECS, Univ. of California Irvine, Irvine, CA, USA
fYear :
2011
fDate :
22-22 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we propose an approach to dynamically adjust supply voltages and refresh cycle in Dynamic Random Access Memory (DRAM). With this approach, we can save the chip power consumption with an awareness of process variations and temperature changing. While DRAM systems are generally designed for the worst case condition, they seldom operate under those scenarios. Thus, we can exploit the design slack when operating under more favorable conditions to save power. Simulations showed that it is possible to save power consumption by as much as 40%.
Keywords :
DRAM chips; low-power electronics; DRAM; DRAM systems; adjustable supply voltages; chip power consumption; dynamic random access memory; Arrays; Leakage current; Power demand; Random access memory; Temperature measurement; Temperature sensors; Voltage control; DRAM; adaptive design; low-power consumption; process variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on
Conference_Location :
Boise, ID
ISSN :
1947-3834
Print_ISBN :
978-1-4244-9740-9
Type :
conf
DOI :
10.1109/WMED.2011.5767277
Filename :
5767277
Link To Document :
بازگشت