InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

Author

Moerman, I. ; Vanderbauwhede, W. ; D´Hondt, M. ; Van Daele, P. ; Demeester, P. ; Hunziker, W.

Author_Institution

Dept. of Inf. Technol., Gent Univ., Gent, Belgium

fYear

1995

fDate

9-13 May 1995

Firstpage

717

Lastpage

720

Abstract

We have successfully integrated a mode size converter with a PBH strained MQW InGaAsP/InP laser diode using the SMG technique. The laser performance is hardly affected by the taper integration. Due to the taper, the coupling loss to a cleaved fibre is reduced from 9.3 dB for a non-tapered laser to 3.3 dB for a laser with a 200 /spl mu/m taper.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser modes; optical fibre couplers; optical losses; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 200 mum; 3.3 dB; InGaAsP-InP; InGaAsP/InP strained MQW laser; MOVPE reactor; PBH strained MQW InGaAsP/InP laser diode; SMG technique; cleaved fibre coupling; coupling loss; integrated mode size converter; shadow masked growth technique; taper integration; Indium phosphide; Laser modes; Optical fiber communication; Optical fiber devices; Optical interconnections; Optical waveguides; Packaging; Quantum well devices; Substrates; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido, Japan

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522244

Filename

522244