Monolithic integration of GaInAsP/InP collimating GRIN lens with tapered waveguide active region

Author

El Yumin, S. ; Arai, S. ; Kimura, T. ; Kasyou, H. ; Saito, K. ; Ubukata, A.

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

721

Lastpage

724

Abstract

A GaInAsP/InP collimation GRIN lens monolithically integrated with a tapered waveguide laser was realized, and a circular beam divergence (θ_p=7°, θ_⊥=7.5°) was obtained with an output width of 15 μm and a core thickness of the GRIN lens of about 8 μm

Keywords

III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; integrated optics; lenses; optical collimators; optical fibre couplers; optical losses; semiconductor lasers; waveguide lasers; 0.1 dB; 15 mum; 8 mum; GaInAsP-InP; GaInAsP/InP collimating GRIN lens; circular beam divergence; core thickness; coupling loss reduction; monolithic integration; output width; single mode fiber coupling; tapered waveguide active region; tapered waveguide laser; Collimators; Indium phosphide; Laser beams; Lenses; Monolithic integrated circuits; Optical coupling; Optical losses; Optical refraction; Optical variables control; Optical waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522245

Filename

522245