Title :
Monolithic integration of GaInAsP/InP collimating GRIN lens with tapered waveguide active region
Author :
El Yumin, S. ; Arai, S. ; Kimura, T. ; Kasyou, H. ; Saito, K. ; Ubukata, A.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
A GaInAsP/InP collimation GRIN lens monolithically integrated with a tapered waveguide laser was realized, and a circular beam divergence (θp=7°, θ⊥=7.5°) was obtained with an output width of 15 μm and a core thickness of the GRIN lens of about 8 μm
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; integrated optics; lenses; optical collimators; optical fibre couplers; optical losses; semiconductor lasers; waveguide lasers; 0.1 dB; 15 mum; 8 mum; GaInAsP-InP; GaInAsP/InP collimating GRIN lens; circular beam divergence; core thickness; coupling loss reduction; monolithic integration; output width; single mode fiber coupling; tapered waveguide active region; tapered waveguide laser; Collimators; Indium phosphide; Laser beams; Lenses; Monolithic integrated circuits; Optical coupling; Optical losses; Optical refraction; Optical variables control; Optical waveguides;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522245
