Title :
Optimized Germanium co-implant with B2H6 PLAD for better advanced PMOS device performance
Author :
Liu, Jennifer Lequn ; Qin, Shu ; Hu, Jeff ; McTeer, Allen
Author_Institution :
Micron Technol., Inc., Boise, ID, USA
Abstract :
The following abstracts are given: Optimized Germanium Co-Implant with B2H6 PLAD for Better Advanced PMOS Device Performance; Design of low noise CMOS charge pump with adjustable output voltage and adjustable power; Measurement and Simulation of Various Geometries of LTCC Electron Hop Funnels; Efficient Design and Synthesis of Decimation Filters for Wideband Delta-Sigma ADCs; A Novel Material Solution for Non Volatile Contact Bridge Memristive Memory Fabrication; Radiation induced effects in pure and Ag doped Ge-Se films; and Design Techniques for a 70 Gbps CMOS Multiplexer.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOS integrated circuits; SPICE; ceramic packaging; delta-sigma modulation; germanium; multiplexing equipment; random-access storage; silver; Ag doped Ge-Se films; B2H6 PLAD; CMOS multiplexer; LTCC electron hop funnels; PMOS device performance; decimation filters; low noise CMOS charge pump; nonvolatile contact bridge memristive memory fabrication; optimized germanium co-implant; radiation induced effects; wideband delta-sigma ADC; CMOS integrated circuits; Computers; Glass; Implants; Silver; USA Councils;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-9740-9
DOI :
10.1109/WMED.2011.5767280
