Title :
High electron mobility 18,300 cm2/V·s InAlAs/InGaAs pseudomorphic structure by channel indium composition modulation
Author :
Nakayama, T. ; Miyamoto, H. ; Oishi, E. ; Samoto, N.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Otsu, Japan
Abstract :
We have successfully obtained the highest electron mobility yet reported for an InAlAs/InGaAs heterostructure using an indium composition modulated channel. With this channel, we have successfully obtained an In0.8Ga0.2As (2 nm)/InAs (4 nm)/In0.8Ga0.2As (4 nm) channel within InGaAs layers, with smooth In0.52Al0.48As/In0.53 Ga0.47As/In0.8Ga0.2As/InAs/In 0.8Ga0.2As heterointerfaces. The thick, high In-content channel in our new structure produced superior electron confinement, contributing to the highest room temperature mobility yet reported for InP-based pseudomorphic InAlAs/InGaAs heterostructures
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; 2 nm; 4 nm; In0.52Al0.48As-In0.53Ga0.47 As -In0.8Ga0.2As-InAs-In0.8Ga0.2 As; In0.8Ga0.2As/InAs/In0.8Ga 0.2As channel; InAlAs/InGaAs pseudomorphic structure; InAs layer thickness; channel In composition modulation; electron confinement; high electron mobility; room temperature mobility; solid source MBE; Capacitive sensors; Carrier confinement; Charge carrier density; Effective mass; Electron mobility; Indium gallium arsenide; Photonic band gap; Poisson equations; Schrodinger equation; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522248
