Title :
A new empirical RF model for deep-submicron MOSFET´s device
Author :
Wong, J.S. ; Ma, J.-G. ; Yeo, K.S. ; Do, M.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
A RF model for MOSFET devices is presented. We used a new DC current model and assigned empirical equations to the 3 capacitors in our RF model such that the model can simulate the performance of the device under different bias conditions. This model can be easily implemented in any commercial CAD tools. The model was verified using measurement data of a 0.35 μm n-channel MOSFET
Keywords :
MOSFET; S-parameters; UHF field effect transistors; UHF integrated circuits; equivalent circuits; semiconductor device models; 0.35 micron; DC current model; RFIC design; bias conditions; commercial CAD tool implementation; deep-submicron MOSFET device; empirical RF model; n-channel MOSFET; Capacitance; Capacitors; Current measurement; Design automation; Design optimization; Differential equations; Equivalent circuits; Fingers; MOSFET circuits; Radio frequency;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926006
