Title :
Reliability of AlInAs/InGaAs/InP HEMT with WSi ohmic contacts
Author :
Sasaki, H. ; Yajima, K. ; Yoshida, N. ; Ishihara, O. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have obtained extremely high reliability on the AlInAs/InGaAs/InP HEMT using WSi ohmic electrodes. The WSi electrode of this device demonstrates high stability under a high temperature (Ta=170~200°C) operating life test. The sample analyzed by a cross-sectional TEM/EDX shows no degradation of the WSi/InGaAs interface, on the other hand, titanium (Ti) and fluorine (F) are detected in the AlInAs layer. The estimated degradation mechanism of this device is related with decrease of carrier concentration in the epitaxial layer
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; life testing; ohmic contacts; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; transmission electron microscopy; tungsten compounds; 170 to 200 C; AlInAs-InGaAs-InP; AlInAs/InGaAs/InP HEMT; WSi ohmic contacts; WSi-InGaAs; WSi/InGaAs interface; cross-sectional TEM/EDX; degradation mechanism; epitaxial layer carrier concentration; high reliability; high stability; high temperature operating life test; ohmic electrodes; Degradation; Electrodes; HEMTs; Indium gallium arsenide; Indium phosphide; Life testing; Ohmic contacts; Stability; Temperature; Titanium;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522251
