Title :
Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier
Author :
Khusaidi, A. ; Riyadi, M.A. ; Alam, B.R.
Author_Institution :
Dept. of Electr. Eng., Inst. of Technol., Bandung, Indonesia
Abstract :
A large signal HFET model based on the Curtice-Cubic model is constructed. Power GaAs HFET transistor SHF0186K is adopted for extraction. The DC and S-parameters characteristics of the transistor are used to derive the model. The simulation and measurement result of I-V and Y-parameter characteristics are compared
Keywords :
III-V semiconductors; S-parameters; UHF field effect transistors; UHF power amplifiers; gallium arsenide; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; 2.4 GHz; Curtice-Cubic model; DC characteristics; GaAs; GaAs HFET; HFET characterization; I-V characteristics; S-parameters; SHF0186K device; Y-parameter characteristics; large signal model; linear high power amplifier design; modeling; power HFET; Gallium arsenide; HEMTs; High power amplifiers; Linearity; Low-noise amplifiers; MODFETs; Microwave transistors; Power amplifiers; Power system modeling; Scattering parameters;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926010
