Title :
A novel ultra-wideband 90 degrees GaAs MMIC phase shifter with either analogue or digital control
Author :
Dai, Yong-sheng ; Chen, Tang-Sheng
Author_Institution :
Nanjing Electron Devices Inst., China
Abstract :
Design, fabrication and characterization of a novel ultra-wideband, GaAs MMIC digital/analogue compatible 90° phase shifter is described over 5 to 20 GHz band. The topology was specifically selected to minimize process variations on performance. Low peak phase error, PPE (<5 degree), low VSWR (<1.5), low insertion loss variations (<3.0±0.6 dB) and good phase shift linearity with the control voltage of MESFET´s gates for analogous state are exhibited over 5 to 20 GHz frequency range. The chip size of the MMIC phase shifter is 4.2 mm×0.56 mm×0.1 mm
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; field effect MMIC; gallium arsenide; 3.0 dB; 5 to 20 GHz; GaAs; VSWR; analogue control; circuit topology; digital control; insertion loss; linearity; peak phase error; ultra-wideband GaAs MESFET MMIC phase shifter; Error correction; Fabrication; Gallium arsenide; Insertion loss; Linearity; MMICs; Phase shifters; Topology; Ultra wideband technology; Voltage control;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926016