DocumentCode :
3136354
Title :
A novel multi-octave 5-bit GaAs MMIC phase shifter
Author :
Dai, Yong Sheng ; Chen, Xiao Jian
Author_Institution :
Nanjing Electron. Devices Inst., China
fYear :
2000
fDate :
2000
Firstpage :
1085
Lastpage :
1088
Abstract :
Design, fabrication and performance of a novel multi-octave five-bit GaAs MMIC phase shifter is described. The topology was specifically selected to minimize process variations on performance. The topology of 22.5 and 11.25 degree phase shift bits is a reflection type topology with a sharing Lange coupler. Low peak phase error (PPE) (⩽5 degree for 180, 90, 45 degree phase shift bits, ⩽2.5 degree for 22.5, 11.23 degree phase shift bits), low VSWR (±1.5), low insertion loss variations (⩽14±0.7 dB) are exhibited over 5 to 20 GHz frequency range. The chip size of the 5-bit MMIC phase shifter is 4.2 mm×2.96 mm×0.1 mm
Keywords :
III-V semiconductors; MMIC phase shifters; gallium arsenide; 14 dB; 5 bit; 5 to 20 GHz; GaAs; VSWR; insertion loss; multi-octave GaAs MMIC phase shifter; peak phase error; reflection-type topology; sharing Lange coupler; Circuit topology; Costs; Fabrication; Gallium arsenide; Gold; Insertion loss; MESFETs; MMICs; Phase shifters; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.926017
Filename :
926017
Link To Document :
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