DocumentCode
3136423
Title
A modified BSIM 0.35 μm MOSFET RF large-signal model for microwave circuit application
Author
Hsiao, Chao-Chih ; Kuo, Ching-wei ; Chan, Yi-Jen
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fYear
2000
fDate
2000
Firstpage
1109
Lastpage
1112
Abstract
A modified 0.35 μm gate-length MOSFET RF large signal model based on BSIM3v3 is presented in this report. The RF large signal model includes a BSIM3v3 model, and some passive components to simulate the device DC and RF characteristics. The added parasitic components are scaleable versus the device gate-width. A 2.4 GHz CMOS MMIC oscillator has been demonstrated based on these active models and on chip passive components
Keywords
CMOS analogue integrated circuits; MMIC oscillators; MOSFET; semiconductor device models; 0.35 micron; 2.4 GHz; BSIM3v3; CMOS MMIC oscillator; DC characteristics; MOSFET; RF characteristics; RF large-signal model; active model; microwave circuit; on-chip passive component; parasitic component; CMOS technology; Chaotic communication; MMICs; MOSFET circuits; Microwave circuits; Oscillators; Parasitic capacitance; RF signals; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.926023
Filename
926023
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