Spontaneous formation of aligned InGaAs quantum dots on GaAs multi-atomic steps by metalorganic chemical vapor deposition growth

Author

Kitamura, M. ; Nishioka, M. ; Oshinowo, J. ; Arakawa, Y.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

763

Lastpage

765

Abstract

The InGaAs quantum dots were grown on a multi-atomic step structure by MOCVD. AFM images indicated that these quantum dots are grown not on the terrace but on the multi-atomic step edges. Using this phenomenon, we demonstrate successful alignment of the InGaAs quantum dots by spontaneous growth without any pre-processing technique. Finally, formation of twin InGaAs quantum dots was demonstrated

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; AFM images; GaAs; GaAs multi-atomic steps; InGaAs; MOCVD; aligned InGaAs quantum dots; multi-atomic step structure; spontaneous growth; twin InGaAs quantum dots; vicinal substrate; Atomic layer deposition; Channel hot electron injection; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; MOCVD; Quantum dots; Substrates; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522255

Filename

522255